jiangsu changji ang electronics technology co., ltd www.cj-elec.com 1 sot -363 plastic-encapsulate diodes bav99 bdw high-speed swit ching diode features z small pla s tic package z ultra high speed switching application z for general purpose switching application marking: dn maximum ratings ( t a =25 unless otherw ise noted ) symbol paramete r value unit v rm non-re p etitive peak reverse voltage 100 v v rrm peak repetitiv e revers e voltage v rw m wo rking pe ak reverse voltage 75 v r(rms) rms reverse v o ltage 53 v i o av erag e rectified output current 215 ma 2 a i fsm non-repetitive peak forward surge current @ 8.3 ms p d po w e r dissipation 200 mw r ja t hermal resist ance from jun ction to ambient 625 /w t j junction t emperature 150 t stg st orage t emperature -55~+150 electrical charact eristics(t a =25 unless other w ise specified) paramete r sy mbol test conditions min typ max unit rev e rse voltage v (br) i r =100 a 75 v v r =75v 2.5 a rev e rse current i r v r =20v 25 na i f =1ma 0.715 i f =10ma 0.855 i f =50ma 1 forw a rd voltage v f i f =150ma 1.25 v to t al capacitance c tot v r =0,f=1mhz 2 pf rev e rse recovery time t rr i f = i r =10ma, i rr =0.1 i r , r l =100 ? 4 ns so t -363 t= v c,mar,2016
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